SAW 소자 46 나노 초 7.5W 랑가사이트 50KHz LGS 기반을 둔 Q스위치

LGS Crystal For LGS Q Switch BAW device SAW device

LGS Series Electro-optic (EO) Q-switch Pockels Cell

A new kind of EO Q-switch is designed by use of a La₃Ga₅SiQ₁₄ (LGS) crystal. LGS crystal is one kind of optically active NLO material with very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.

Features:

• LGS -based Q-switch (Pockels cell);
• For wavelengths up to 3.2μm;
• Transmitted Wave Front Distortion: < l/4;
• Damage threshold: >900MW/cm² (@1064nm, 10ns, typical, not guaranteed);
• LGS available for medium power systems, partially take place of DKDP and LiNbO₃ series Q-switches.

LGS-Q-Switch Properties: